Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2007-11-06
2009-02-03
Gutierrez, Diego (Department: 2831)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S678000, C324S765010, C324S762010, C324S652000, C324S687000, C331S057000
Reexamination Certificate
active
07486086
ABSTRACT:
A method for measuring intrinsic capacitance of a MOS device is provided. The MOS device includes a first terminal, a second terminal, a third terminal and a fourth terminal. First, provide a first input signal to the second terminal and ground the third terminal and fourth terminal. Then, charge the first terminal and measure a first current required for charging the first terminal. Afterward, provide a second input signal to the second terminal, ground the third terminal and the fourth terminal, and measure a second current required for charging the first terminal, wherein the first input signal and the second input signal have the same low level, but different high levels. Finally, determine intrinsic capacitance between the first terminal and the second terminal according to the first current, the second current and a high level difference between the first input signal and the second input signal.
REFERENCES:
patent: 5773317 (1998-06-01), Wu et al.
patent: 5999010 (1999-12-01), Arora et al.
patent: 6366098 (2002-04-01), Froment
patent: 6404222 (2002-06-01), Fan et al.
patent: 6456105 (2002-09-01), Tao
patent: 6549029 (2003-04-01), Hsieh et al.
patent: 6750673 (2004-06-01), Huang et al.
patent: 6756792 (2004-06-01), Armbruster
patent: 6885214 (2005-04-01), Su et al.
patent: 7068061 (2006-06-01), Tanida et al.
patent: 7088123 (2006-08-01), Yang et al.
patent: 7112982 (2006-09-01), Honda et al.
patent: 7265639 (2007-09-01), Bhushan et al.
patent: 7385405 (2008-06-01), Chen
patent: 2003/0227291 (2003-12-01), Okagaki et al.
patent: 2007/0162879 (2007-07-01), Tiwari
patent: 3917706 (1990-10-01), None
Yang, Kevin J., and Hu, Chenming, MOS Capacitance Measurements for High Leakage Thin Dielectrics, IEEE Transactions on Electron Devices, vol. 46, No. 7, Jul. 1999, p. 1500-1501.
Chang Hsing-Wen
Chang Yao-Wen
Lu Tao-Cheng
Bacon & Thomas PLLC
Baldridge Benjamin M
Gutierrez Diego
Macronix International Co. Ltd.
LandOfFree
Method for measuring intrinsic capacitance of a metal oxide... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for measuring intrinsic capacitance of a metal oxide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for measuring intrinsic capacitance of a metal oxide... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4099691