Optics: measuring and testing – By polarized light examination
Patent
1991-07-31
1994-02-15
Rosenberger, Richard A.
Optics: measuring and testing
By polarized light examination
356370, 356351, 356432, 356433, 250225, G01J 400, G01N 2100
Patent
active
052871673
ABSTRACT:
The invention related to a method for determining a silicon wafer in which the interstitial oxygen concentration of a pulled silicon wafer is calculated on the basis of a light transmission characteristic measured by utilizing parallel polarized light incident at the brewster angle into the pulled silicon wafer and a further light transmission characteristic measured by utilizing parallel polarized light incident at the brewster angle into the floating zone silicon wafer function as a reference silicon wafer. The interstitial oxygen concentration value of the pulled silicon wafer is compared with a reference value to determine a defect in pulled silicon wafer.
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Shirai Hiroshi
Takasu Shin'ichiro
Watanabe Mikio
Pham Hoa Q.
Rosenberger Richard A.
Toshiba Ceramics Co. Ltd.
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