Method for measuring gate dielectric properties for three...

Details Method for measuring gate dielectric properties for three... Method for measuring gate dielectric properties for three...

2006-09-19

2006-09-19

Nguyen, Vinh (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S750010

Reexamination Certificate

active

07109735

ABSTRACT:
A method for measuring three-dimensional gate dielectric structures can involve forming test patterns that cover a range of dimensional values for the fins on which the gate dielectric structures are formed. Then, by measuring the gate dielectric properties and then correlating those measurements with the underlying fin dimensions, a relationship between fin dimension(s) and gate dielectric properties can be determined. That relationship can then be applied to actual device structures to interpolate/extrapolate gate dielectric property values based on the fin dimensions in the actual device.

REFERENCES:
patent: 6121783 (2000-09-01), Horner et al.
patent: 6191605 (2001-02-01), Miller et al.
patent: 6202029 (2001-03-01), Verkuil et al.
patent: 6522158 (2003-02-01), Fung et al.
patent: 6680621 (2004-01-01), Savtchouk et al.
patent: 6915232 (2005-07-01), Kitajima et al.

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