Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2006-06-14
2008-09-30
Nguyen, Ha (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
Reexamination Certificate
active
07429869
ABSTRACT:
A coefficient indicating the relationship between a measurement voltage of voltage measuring unit and a voltage drop in a drain bias voltage due to drain current is determined based on an S parameter of a bias tee and an input impedance of the measuring unit. A voltage drop at the drain is determined from the coefficient. Based on the determined voltage drop, a drain bias voltage actually applied to the drain of an FET is determined. Also, a coefficient for converting the measurement voltage of the measuring unit into a drain current is determined based on an S parameter of a two-terminal-pair network of the bias tee and the input impedance of the voltage measuring unit. Based on the determined coefficient, a drain current actually flowing in the FET is determined.
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“Measurement of I-V Curves of Silicon-on-Insulator (SOI) MOSFET's Without Self-Heating”. IEEE Electron Device Letters, vol. 16, No. 4, Apr. 1995.
International Search Report dated Sep. 19, 2006 based on corresponding PCT application No. PCT/JP2006/312007.
Agilent Technologie,s Inc.
Bobys Marc
Nguyen Ha
Nguyen Tung X
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