Method for measuring epitaxial film thickness of multilayer epit

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G01J 502

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06025596&

ABSTRACT:
In a measurement method for measuring the epitaxial film thickness of a multilayer epitaxial wafer, a reflectivity spectrum of a multilayer epitaxial wafer having at least two epitaxial layers of different electric characteristics is measured by using infrared radiation in a far infrared region of at least 500 cm.sup.-1 or less, and frequency-analysis is performed on the reflection spectrum thus obtained by a maximum entropy method, and the film thickness of each epitaxial layer is calculated on the basis of the analysis spectrum thus obtained.

REFERENCES:
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patent: 5740226 (1998-04-01), Komiya
Patent Abstract of Japan, abstract of N. Seiji et al, Apparatus and Method of Measurement of Film Thickness of Semiconductor Multilayer Thin Film, Japanese 7-4922, Jan. 10, 1995.
Patent Abstract of Japan, abstract of N. Seiji et al., "Semiconductor Film Thickness Measuring Device", Japanese 5-302816, Nov. 16, 1993.
Electronic Materials, vol. 28 No. 11, pp. 40-45, Nov. 1, 1989.
R. Fukasawa et al, "Japanese Journal of Optics", Analytical Estimation of the Multilayer Thickness Using the Intererometric Spectrometry, vol. 20, pp. 305-309, May 1991.
S. Kawata et al., "Applied Optics", Superresolution of Fourier transform spectroscopy data by the maximum entrophy method, vol. 22, No. 22, pp. 3593-3598, Nov. 15, 1983.

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