Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1997-03-27
1999-05-11
Nguyen, Nam
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430 22, 430394, 356373, 356375, 356383, 356384, G03F9/00
Patent
active
059027037
ABSTRACT:
Line shortening and other defects in integrated circuits are measured by imprinting accuracy determinative patterns in the scribe lines or die margins of the mask field. The patterns are ideally formed in the general nature of the usual box in a box configuration with one of the boxes being specially configured to include a series of lines and spaces having narrow widths comparable to the width of the lines to be formed in the integrated circuit. The use of the narrow lines provides the box in a box configuration with the same line shortening that the circuit feature will itself experience. Small spaces between the lines permit the standard measuring equipment to locate at the ends of the lines.
REFERENCES:
patent: 5328807 (1994-07-01), Tanaka et al.
patent: 5439765 (1995-08-01), Nozue
patent: 5447810 (1995-09-01), Chen et al.
patent: 5700602 (1997-12-01), Dao et al.
patent: 5731109 (1998-03-01), Hwang
patent: 5798195 (1998-08-01), Nishi
patent: 5800951 (1998-09-01), Hashimoto
Leroux Pierre
Satyendra Sethi
Ziger David
Nguyen Nam
VerSteeg Steven H.
VLSI Technology Inc.
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