Method for measuring crystal defect and equipment using the same

Optics: measuring and testing – Inspection of flaws or impurities – Surface condition

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

25055933, 25055945, 356375, G01N 2100, G01N 2186

Patent

active

061080799

ABSTRACT:
In order to measure an inner defect of a sample with a certain high accuracy even if the sample surface of the moved up and down by flatness irregularity of the sample and problem on accuracy of the sample movement stage, incident light beams having two wavelength and respective different penetration depths for the sample are slantingly irradiated on the surface of the moving sample 15 from irradiation optical systems 4, 8, and the inner defect of the sample is measured by detecting the scattering light occurred from the interior of the sample with a detection optical system 9 arranged over the sample surface. A distance measurement means 14 is located in an upstream of a movement direction of said sample than said irradiation optical system 4, 8 and said detection optical system 9, thereby a surface height of said sample is measured. When a measured point on sample measured by the distance measurement means 14 is arrived at a lower part of the detection optical system 9, height positions of the irradiation optical system and the detection optical system are controlled by piezo electric elements 11,12,13 so that the irradiation optical system and the detection optical system are located at predetermined positions relating to the measured point.

REFERENCES:
patent: 4988886 (1991-01-01), Palum et al.
patent: 5247186 (1993-09-01), Toda
patent: 5621218 (1997-04-01), Tanaka
patent: 5801835 (1998-09-01), Mizutani et al.
patent: 5903342 (1999-05-01), Yatsugake et al.
patent: 5936726 (1999-08-01), Takeda et al.
"A New Measurement Method of Micro Defects Near the Surface of Si Wafers; Optical Shallow Defect Analyzer (OSDA)" in Mat. Res. Soc. Symp. Proc. vol. 442 1997 Materials Research Society, pp. 37-42.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for measuring crystal defect and equipment using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for measuring crystal defect and equipment using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for measuring crystal defect and equipment using the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-586951

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.