Method for measuring capacitance of passive device region

Details Method for measuring capacitance of passive device region Method for measuring capacitance of passive device region

1999-06-08

2001-07-03

Metjahic, Safet (Department: 2858)

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

C324S658000, C324S662000

Reexamination Certificate

active

06255809

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates to a method for measuring a capacitance, and more particularly, to a method for measuring a capacitance of a passive device region while being applied two bias voltages at two different terminals thereof.
2. Description of the Related Art
While applying a bias to a passive device region, a resistance-capacitance (RC) effect occurs. Based on the conventional measuring method, the capacitance is constant. In normal application, the actual magnitude of capacitance does not vary a lot with the applied bias. However, in analog application or high frequency operation, a precise measurement of the capacitance is required to monitor the behavior of RC component, the conventional method cannot achieve the objective.
SUMMARY OF THE INVENTION
The invention provides a method for measuring a capacitance of a passive device. A passive device region formed on a substrate is provided. A capacitance per unit area Cj and a capacitance per unit sidewall Cjsw of the passive device region are measured while an applied bias to the passive device region is 0V. An internal voltage PB of the substrate under an area effect and an internal voltage PBsw of the substrate under a sidewall effect are measured. A first bias voltage Vd
1
is applied to a first terminal of the passive device region and a second bias voltage Vd
2
is applied to a second terminal of the passive device region. A distance L between the first and the second terminals and a width W of the passive device region are measured. A first and a second capacitance Cin and Cout induced at the first and the second terminals are derived from the following equations:
Cin=Cj
(1
−Vd
1
/
PB
)
−Mj
·(½
L·W
)+
Cjsw
(1
−Vd
1
/
PBsw
)
−Mjsw
·(
L+W
);
and
Cout=Cj
(1
−Vd
2
/
PB
)
−Mj
·(½
L·W
)+
Cjsw
(1
−Vd
2
/
PBsw
)
−Mjsw
·(
L+W
).
The invention provides a method for measuring a capacitance of a passive device region. As the applied bias and the dimensions of area and sidewall change, the induced capacitance is consequently changed to exactly reflect the behavior of RC component.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.


REFERENCES:
patent: 5059897 (1991-10-01), Aton et al.

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