Method for measuring an aberration of a projection optical syste

Details Method for measuring an aberration of a projection optical syste Method for measuring an aberration of a projection optical syste

2000-01-24

2000-12-12

Kim, Robert H.

Optics: measuring and testing

By alignment in lateral direction

With registration indicia

356399, 250548, G01B 1100

Patent

active

061606235

ABSTRACT:
An aberration of a projection exposing apparatus system is measured from the difference between widths of both-end lines even in a fine pattern having a pattern line width of less than 0.2 .mu.m. A resist film on a substrate is exposed to light, using a mask having a line-and-space (LS) pattern. This exposure is repeated plural times at plural exposures, so as to obtain, at the respective exposures, the differences between the widths of the both-end lines of the line-and-space pattern. The difference between the widths of the both-end lines at a standard (optimal) exposure is estimated from the relationship between the differences between the widths of the both-end lines and the exposures, so as to obtain an aberration at the standard exposure.

REFERENCES:
patent: 5208629 (1993-05-01), Matsuo et al.

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