Method for measuring a substitutional carbon concentration

Details Method for measuring a substitutional carbon concentration Method for measuring a substitutional carbon concentration

1997-05-06

1998-09-15

Pham, Hoa Q.

Optics: measuring and testing

For light transmission or absorption

By comparison

356364, 356370, 356351, 250225, G01J 4000, G01N 2100

Patent

active

058087451

ABSTRACT:
A silicon wafer measuring method includes: (a) a first step of measuring a light transmission characteristic (I.sub.OBS) of the pulled silicon wafer by utilizing parallel polarized light incident at the Brewster angle into the pulled silicon wafer, (b) a second step of measuring a light transmission characteristic (I.sub.O) of a floating zone silicon wafer functioning as a reference silicon wafer by utilizing parallel polarized light incident at the Brewster angle into the floating zone silicon wafer, and (c) a third step of calculating a substitutional carbon concentration (I.sub.OBS) of the pulled silicon wafer measured during the first step and the light transmission characteristic (I.sub.O) of the floating zone silicon wafer measured during the second step, (d) a fourth step of pulled silicon wafer measured during the third step with a reference value, and (e) a fifth step of removing a pulled silicon wafer if its values about the reference value so as to be defective in view of the results compared during the fourth step.

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