Method for material growth of GaN-based nitride layer

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Reexamination Certificate

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C438S048000, C438S050000, C438S508000, C438S508000

Reexamination Certificate

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07393213

ABSTRACT:
The present invention relates to a method for forming a GaN-based nitride layer comprising a first step of forming a first layer comprising SiaCbNc(c,fc>0, a≧0) on a sapphire substrate and a second step for forming a nitride layer comprising a GaN component on the first layer comprising SiaCbNc(c,b>0, a≧O).

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Jin-Hyo Boo et al., “Growth of hexagonal GaN thin films on Si(111) with cubic SiC buffer layers,”Journal of Crystal Growth, vol. 189, No. 190, pp. 183-188 (1998).

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