Method for mass producing miniature field effect transistors in

Details Method for mass producing miniature field effect transistors in Method for mass producing miniature field effect transistors in

1979-12-03

1982-10-19

Walton, Donald L.

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 148 15, H01L 21263

Patent

active

043543073

ABSTRACT:
In the disclosed method, dopant atoms of a first conductivity type are implanted into the surface of a semiconductor substrate to form a channel region of each transistor having a relatively high dopant density at a predetermined depth below the surface and a substantially lower dopant density at the surface. This eliminates reachthrough in the channel without adversely increasing the channels threshold voltage. Thereafter, dopant atoms of a second conductivity type are implanted into the substrate to form source and drain regions adjacent to the channels having a depth of less than 0.3 .mu.m below the surface. This minimizes the radius of curvature and corresponding depletion width at the respective junctions with the channel. Subsequently, a patterned insulating layer is formed on said surface at temperatures that are far below the insulating layer's flow point. This avoids diffusing the distribution of the implanted dopant atoms. Later, a layer of metallic contact is formed in an opening of the patterned insulating layer that exposes one of the source and drain regions. This layered metallic contact has a lower layer which is comprised of a material that prevents an upper layer from penetrating through the exposed source or drain region.

REFERENCES:
patent: 3571913 (1971-03-01), Bodway et al.
patent: 3590471 (1971-07-01), Lepselter et al.
patent: 3938243 (1976-02-01), Rosvold
patent: 4053335 (1977-10-01), Hu
patent: 4152823 (1979-05-01), Hall
patent: 4173818 (1979-11-01), Bassous et al.
patent: 4220116 (1980-09-01), Hochberg
Beyer et al, Gettering and Barrier Technique, IBM Technical Disclosure Bulletin, vol. 19, No. 6, Nov. 1976, pp. 2050-2051.
Dennard et al, Design of Ion Implanted MOSFETs IEEE Journal of Solid State Circuits, vol. SC-9, No. 5, Oct. 1974, pp. 256-268.

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