Method for masking a recess in a structure having a high...

Details Method for masking a recess in a structure having a high... Method for masking a recess in a structure having a high...

2007-08-28

2007-08-28

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Planarizing a nonplanar surface

C216S017000, C216S018000, C216S058000, C216S067000, C438S689000, C438S719000

Reexamination Certificate

active

10501464

ABSTRACT:
A method for selective masking is described. In this case, a filling material is applied to a structure which, as a function of the aspect ratio of the structure, forms cavities when the aspect ratio is high. The filling layer is then removed as far as the cavities and, using an etching process, filling material is removed completely from the recesses in which the cavities are formed. In this way, areas are exposed selectively.

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