Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1997-07-15
1999-03-02
Bowers, Charles
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
438694, 438700, H01L 21306
Patent
active
058770640
ABSTRACT:
The present invention discloses a method for marking a wafer surface with minimized particulate contamination problem and further, the method is compatible with a chemical mechanical polishing method for planarization. An identification mark can be made on the non-patterned side of a wafer by a high energy laser beam either with or without an insulating layer deposited on top of the wafer. The method can also be carried out by first providing an identification mark on a non-patterned surface of the wafer and then, after all fabrication processes have been conducted on the patterned side of the wafer and a planarization process is conducted by a chemical mechanical polishing method, the identification mark on the backside of the wafer can be automatically read and then reproduced on the patterned side of the wafer prior to the shipment of the wafer to a customer or to a packaging facility. The present invention method significantly reduces the particle contamination problem that is frequently caused by laser scribing a silicon surface and furthermore, substantially eliminates the problem that an identification mark becomes illegible after a planarization process by chemical mechanical polishing.
REFERENCES:
patent: 3752589 (1973-08-01), Kobayashi
patent: 4166574 (1979-09-01), Yokoyama
patent: 4470875 (1984-09-01), Poteat
patent: 4510673 (1985-04-01), Shils et al.
patent: 4534804 (1985-08-01), Cade
patent: 4732646 (1988-03-01), Elsner et al.
patent: 5067437 (1997-11-01), Watanabe
patent: 5200798 (1993-04-01), Katagiri et al.
patent: 5408320 (1995-04-01), Katagiri et al.
patent: 5498902 (1996-03-01), Hara
patent: 5503962 (1996-04-01), Caldwell
patent: 5541731 (1996-07-01), Freedenberg
patent: 5610104 (1997-03-01), Mitchell
Chang Chao-Hsin
Lin Yung-Fa
Bowers Charles
Taiwan Semiconductor Manufacturing Co.Ltd
Thompson Craig
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