Etching a substrate: processes – Mechanically shaping – deforming – or abrading of substrate
Patent
1993-08-09
1995-07-04
Breneman, R. Bruce
Etching a substrate: processes
Mechanically shaping, deforming, or abrading of substrate
437225, 216 89, 216 99, H01L 2100
Patent
active
054297117
ABSTRACT:
There is disclosed a wafer-manufacturing method in which a single crystal ingot is first sliced into a plurality of wafers, and both surfaces of each wafer are subjected to grinding or lapping operation. Then, the front and back surfaces of the wafer are subjected to etching. Thereafter, the back surface of the wafer is subjected to chemical mechanical polishing to half-polish the same, following which the wafer is placed on a polishing machine, with the half-polished back surface of the wafer being adhered to a carrier plate; and the front surface of the wafer is mirror-polished. In the foregoing, a polysilicon film for extrinsic gettering may be formed on the back surface of the etched wafer prior to the half-polishing.
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Patent Abstracts of Japan, vol. 8, No. 176 (E-260) Aug. 14, 1994 & JP-A-59072139, Apr. 24, 1994.
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Harada Hitoshi
Takemura Masanori
Watanabe Mineo
Breneman R. Bruce
Goudreau George
Mitsubishi Materials Corporation
Mitsubishi Materials Silicon Corporation
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