Method for manufacturing vertical structure light emitting...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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C438S025000, C438S027000

Reexamination Certificate

active

07442565

ABSTRACT:
A method for manufacturing a vertical light emitting diode of the invention allows an easier process of individually separating chips. A light emitting structure is formed on a growth substrate having a plurality of device areas and at least one device isolation area. The light emitting structure has an n-type clad layer, an active layer and a p-type clad layer sequentially formed therein. Corresponding p-type electrodes are formed on the light emitting structure on the device areas. A glass substrate having through holes perforated therein is provided on the p-electrodes so that the through holes are disposed corresponding to the p-electrodes. Also, the through holes are plated with a metal material to form patterns of a plating layer on the p-electrodes. Then, the growth substrate is removed to form n-electrodes on the n-type clad layer. The glass substrate is removed via etching.

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patent: 10-0495215 (2005-06-01), None
German Office Action, with English Translation, issued in corresponding German Patent Application No. DE 10 2006 043 843.4-33, issued on Nov. 16, 2007.

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