Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing josephson junction – per se
Patent
1995-06-07
1996-10-15
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Producing josephson junction, per se
505473, 505475, 505190, 505702, 427 62, 4274193, 20419224, H01L 3924
Patent
active
055654150
ABSTRACT:
For manufacturing a superconducting device having a tunnel junction formed of an extremely thin insulator layer sandwiched between a pair of oxide superconductor thin films, a first superconducting layer of oxide superconductor thin film is formed on a substrate, and a MgO thin film is deposited on the first superconducting layer at a substrate temperature of not higher than 200.degree. C. The MgO thin film is heat-treated so that crystallinity of the deposited MgO thin film is improved, and thereafter, a second superconducting layer of oxide superconductor thin film is formed on the MgO thin film.
REFERENCES:
patent: 5061687 (1991-10-01), Takada et al.
Brice, "Crystal Growth Process", Chapt. 11, John Wiley and Sons, New York, (1986) pp. 246-255.
S. Tanaka et al, IEEE Transactions On Magnetics, vol. 27, No. 2, Mar. 1991, pp. 1607-1611, New York, US.
Hirata et al, "Tunneling measurements on superconductor/insulator/superconductor junctions using single-crystal YBa.sub.2 Cu.sub.3 0.sub.7 x thin films" Appl. Phys. lett. 56(7) Feb. 1990 pp. 683-685.
Furuyama et al, "In-situ growth of YBa.sub.2 Cu.sub.3 0.sub.7-x thin films by reactive co-evaporation technique," 2nd Workshop on High-Temperature Superconducting Electron Devices, Jun. 1989 (Japan) pp. 105-108.
Itozaki Hideo
Matsuura Takashi
Tanaka Saburo
King Roy V.
Sumitomo Electric Industries Ltd.
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