Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1998-02-09
1999-11-02
Dutton, Brian
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
372 45, 372 20, H01L 2100
Patent
active
059769033
ABSTRACT:
A method for making a surface-type semiconductor laser specially devised to keep the stability of the wavelength at the next generation laser for WDM, which does not cause a raising characteristic variation with time because the laser wavelength of the individual device can be controlled easily and exactly as required and the devices in which the wavelength control have completed is stable in their material properties. The surface-type semiconductor laser is made by growing the cladding layer within the active layer at a low temperature, growing the upper and the underlying superlattice mirror layers and the quantum well structure within the active layer at a high temperature and then sintering the structure thus formed at a high temperature.
REFERENCES:
patent: 5541949 (1996-07-01), Bhat et al.
patent: 5748665 (1998-05-01), Jiang et al.
patent: 5764674 (1998-06-01), Hibbs-Brenner et al.
patent: 5774487 (1998-06-01), Morgan
Y. Tohmori et al., Over 100 nm Wavelength Tuning In Superstructure Grating (SSG) DBR Lasers, Feb. 18, 1993, pp. 352-354.
Baek Jong Hyub
Lee Bun
Dutton Brian
Electronics and Telecommunications Research Institute
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