Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2007-04-03
2007-04-03
Luu, Chuong Anh (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S187000, C257S192000, C257S222000, C257S291000
Reexamination Certificate
active
10982429
ABSTRACT:
A method for manufacturing a transistor includes forming a semiconductor layer on a substrate, a first insulation film on the semiconductor layer, and a gate electrode on the first insulation film. The method also includes forming a source region, a channel region, and a drain region in the semiconductor layer and forming a second insulation film on the gate electrode. A source electrode and a drain electrode are formed on the second insulation film and are coupled to the source region and the drain region, respectively. The method further includes coupling the drain electrode to the gate electrode through a contact hole that is vertically above the channel region.
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Kim Keum-Nam
Lee Ui-Ho
Christie Parker & Hale LLP
Luu Chuong Anh
Samsung SDI & Co., Ltd.
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