Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Semiconductor device or thin film electric solid-state...
Patent
1994-12-06
1996-02-27
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Semiconductor device or thin film electric solid-state...
505473, 505410, 505191, 505193, 505701, 505728, 427 62, 427 63, 257 35, 257 39, H01L 3924, H01B 1200
Patent
active
054948916
ABSTRACT:
A superconducting device comprises a substrate, a non-superconducting layer formed in a principal surface of said substrate, an extremely thin superconducting channel formed of an oxide superconductor thin film on the non-superconducting layer. A superconducting source region and a superconducting drain region of a relatively thick thickness are formed of the oxide superconductor at the both sides of the superconducting channel separated from each other but electrically connected through the superconducting channel, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device further includes a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, in which the superconducting channel is connected to the superconducting source region and the superconducting drain region at the higher portions than their one third height portions.
REFERENCES:
patent: 5087605 (1992-02-01), Hegde et al.
patent: 5236896 (1993-08-01), Nakamura et al.
patent: 5322526 (1994-06-01), Nakamura et al.
patent: 5345115 (1994-09-01), Tokuda et al.
Mannhart, J. et al, "Electric Field Effect on Superconducting YBa.sub.2 Cu.sub.3 O.sub.7 -.delta.", Zeitschrift Fur Physik B, vol. 83, No. 3: pp. 307-311 (1991).
Levy, A. et al, "Field-effect Conductance of YBa.sub.2 Cu.sub.3 O.sub.6 ", Journal of Applied Physics, vol. 69, No. 8: pp. 4439-4441, 15 Apr. 1991.
Iiyama Michitomo
Nakamura Takao
King Roy V.
Sumitomo Electric Industries Ltd.
LandOfFree
Method for manufacturing three-terminal oxide superconducting de does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing three-terminal oxide superconducting de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing three-terminal oxide superconducting de will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1679319