Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-08-27
1985-02-12
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 148 15, 148187, 357 23, 357 91, H01L 21263, H01L 21225
Patent
active
044982267
ABSTRACT:
A method for manufacturing a three-dimensional semiconductor device which is capable of preventing the stepwise disconnection of an interconnection layer and performing a high integration thereby and which comprises the steps of: forming a polycrystalline or amorphous semiconductor layer on an insulating film having an opening at a predetermined position of a first element covered on a single-crystalline semiconductor substrate having the first element; irradiating an energy beam to said semiconductor layer to grow a single crystal in a predetermined region in said semiconductor layer using as a seed crystal that part of the semiconductor substrate which contacts with semiconductor layer; and forming a second element on the grown single-crystalline semiconductor region and forming an interconnection between the first and second elements by using a part of the single-crystalline semiconductor region from said semiconductor substrate to said second element.
REFERENCES:
patent: 4214918 (1980-07-01), Gat et al.
patent: 4269631 (1981-05-01), Anantha et al.
patent: 4377031 (1983-03-01), Goto et al.
patent: 4377421 (1983-03-01), Wada et al.
patent: 4377902 (1983-03-01), Shinada et al.
patent: 4381201 (1983-04-01), Sakurai
Lam et al., J. Electrochem. Soc. 128 (1981) 1981.
Inoue Tomoyasu
Shibata Kenji
Roy Upendra
Tokyo Shibaura Denki Kabushiki Kaisha
LandOfFree
Method for manufacturing three-dimensional semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing three-dimensional semiconductor device , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing three-dimensional semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1382525