Semiconductor device manufacturing: process – Chemical etching
Patent
1999-02-19
2000-06-13
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
438694, 217 17, H01L 21302
Patent
active
060749482
ABSTRACT:
In a method for manufacturing a semiconductor device, a semiconductor wafer having a front surface with semiconductor elements and a back surface with no semiconductor elements is prepared, and the back surface of the semiconductor wafer is etched to form a first wall on the back surface of the semiconductor wafer in its periphery and a second wall of a grid configuration constructed by two stripes on the back surface of said semiconductor wafer within the first wall. The second wall is connected to the first wall.
REFERENCES:
patent: 3914050 (1975-10-01), Dost et al.
patent: 5041896 (1991-08-01), Temple et al.
patent: 5640047 (1997-06-01), Nakashima
patent: 5801441 (1998-09-01), DiStefano et al.
Chen Kin-Chan
NEC Corporation
Utech Benjamin L.
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