Method for manufacturing thin semiconductor device

Semiconductor device manufacturing: process – Chemical etching

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438694, 217 17, H01L 21302

Patent

active

060749482

ABSTRACT:
In a method for manufacturing a semiconductor device, a semiconductor wafer having a front surface with semiconductor elements and a back surface with no semiconductor elements is prepared, and the back surface of the semiconductor wafer is etched to form a first wall on the back surface of the semiconductor wafer in its periphery and a second wall of a grid configuration constructed by two stripes on the back surface of said semiconductor wafer within the first wall. The second wall is connected to the first wall.

REFERENCES:
patent: 3914050 (1975-10-01), Dost et al.
patent: 5041896 (1991-08-01), Temple et al.
patent: 5640047 (1997-06-01), Nakashima
patent: 5801441 (1998-09-01), DiStefano et al.

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