Method for manufacturing thin GaAs die with copper-back...

Data processing: financial – business practice – management – or co – Automated electrical financial or business practice or...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S666000, C257S473000, C257S669000, C257S675000, C257S700000

Reexamination Certificate

active

07092890

ABSTRACT:
A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner than 2 mils (about 50 microns), thereby reducing heat dissipation problems and allowing the semiconductor die to be compatible with soft-solder technologies. By enabling the semiconductor die to be packaged in a plastic package substantial cost savings can be achieved.

REFERENCES:
patent: 3755720 (1973-08-01), Kern
patent: 3942186 (1976-03-01), McAvoy et al.
patent: 4321099 (1982-03-01), Frosch et al.
patent: 4543442 (1985-09-01), Alcorn et al.
patent: 4872047 (1989-10-01), Fister et al.
patent: 4989117 (1991-01-01), Hernandez
patent: 5528076 (1996-06-01), Pavio
patent: 5545289 (1996-08-01), Chen et al.
patent: 5622305 (1997-04-01), Bacon et al.
patent: 5821154 (1998-10-01), Nashimoto et al.
patent: 6010966 (2000-01-01), Ionov
patent: 6105865 (2000-08-01), Hardesty
patent: 6426289 (2002-07-01), Farrar
patent: 6583500 (2003-06-01), Abbott et al.
patent: 6609106 (2003-08-01), Robertson
patent: 6870243 (2005-03-01), Elliott et al.
patent: 2004/0146138 (2004-07-01), Jiao
patent: 0194475 (1986-09-01), None
patent: 1063701 (2000-12-01), None
patent: 361174723 (1986-08-01), None
Grebs et al., “The Use of Copper Based Backmetal Schemes as a Low Stress and Low Thermal Resistance Alternative for Use in Thin Substrate Power Devices,” Electrochemical Society Proceedings vol. 99-9, XP008011990, Harris Corporation, Mountaintop, PA, pp. 185-193, Mar. 5, 1999.
Chen et al., “Backside Copper Metallisation of GaAs MESFETs,” Electronic Letters, vol. 36, No. 15, Jul. 20, 2000.
Chen et al., “Backside Copper Metallization of GaAs MESFETs Using TaN as the Diffusion Barrier,” 2001 IEEE, IEEE Transactions on Electron Device, vol. 48, No. 6, XP-001082386, Jun. 2001.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing thin GaAs die with copper-back... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing thin GaAs die with copper-back..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing thin GaAs die with copper-back... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3605376

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.