Method for manufacturing thin film transistor substrate...

Details Method for manufacturing thin film transistor substrate... Method for manufacturing thin film transistor substrate...

2006-12-28

2009-02-24

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C257SE21561

Reexamination Certificate

active

07494835

ABSTRACT:
A method for manufacturing a thin film transistor substrate using a maskless exposing device includes forming a data metal layer on a substrate having a gate pattern and common electrodes along with gate insulation layers, active layers, and ohmic contact layers for a thin film transistors; forming a photoresist on the data metal layer; exposing a first amount of light onto the photoresist at first regions, excluding a second region where data lines and thin film transistors are to be formed, by using a maskless exposing device; exposing a second amount of light onto the photoresist at third regions, where channels of the thin film transistors are to be formed, wherein the second amount of light is smaller than the first amount of light; and developing the first, second and third regions of the photoresist.

REFERENCES:
patent: 6100132 (2000-08-01), Sato et al.

Affiliated with

Also associated with

Rating

Method for manufacturing thin film transistor substrate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing thin film transistor substrate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing thin film transistor substrate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4120375