Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-10-31
2006-10-31
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S158000
Reexamination Certificate
active
07129105
ABSTRACT:
A gate wire including gate lines, gate electrodes, and gate pads and extending in a transverse direction is formed on a substrate. A gate insulating layer is formed thereafter, and a semiconductor layer and an ohmic contact layer are sequentially formed thereon. A conductive material is deposited and patterned to form a data wire inducing data lines intersecting the gate lines, source electrodes, drain electrodes, and data pads. A protective layer made of silicon nitride is deposited on the substrate, and an organic insulating layer made of a photosensitive organic insulating material is coated on the protective layer. The organic insulating layer is patterned to form an unevenness pattern on its surface and first contact holes exposing the protective layer opposite the drain electrodes. Subsequently, the surface of the organic insulating layer is treated using inactive gas such as Ar, and then the protective layer is patterned together with the gate insulating layer by photo etch using a photoresist pattern to form contact holes respectively exposing the drain electrodes, the gate pads, and the data pads. Next, indium-tin-oxide or indium-zinc-oxide is deposited and patterned to form transparent electrodes, subsidiary gate pads, and subsidiary data pads respectively connected to the drain electrodes, the gate pads and the data pads. Finally, a reflective conductive material is deposited and patterned to form reflecting films having respective apertures in the pixel area on the transparent electrodes.
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Kim Bong-Ju
Kim Hyun-Young
Tae Seung-Gyu
Yoon Joo-Sun
Lebentritt Michael
MacPherson Kwok & Chen & Heid LLP
Ullah Elias
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