Method for manufacturing thin film semiconductor device and...

Details Method for manufacturing thin film semiconductor device and... Method for manufacturing thin film semiconductor device and...

2005-03-22

2005-03-22

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S736000, C438S737000, C438S738000

Reexamination Certificate

active

06869887

ABSTRACT:
A method for manufacturing a thin film semiconductor device is provided which is capable of achieving simplification of manufacturing processes and of improving alignment accuracy without using a plurality of alignment masks. An alignment pattern is formed by using a resist layer having a plurality of regions each having a different film thickness corresponding to each of a plurality of patterns produced using a halftone mask having a halftone exposure region as a photomask and by forming a light transmitting portion to be an aperture pattern and by etching an underlying silicon layer. By having an underlying silicon layer exposed and implanting ions into an entire resist layer, only a main pattern region is doped with the ions.

REFERENCES:
patent: 6576374 (2003-06-01), Kim
patent: 6599667 (2003-07-01), Yusa et al.
patent: 07-321015 (1995-12-01), None
patent: 10-163174 (1998-06-01), None
patent: 11-307780 (1999-11-01), None
patent: 2001-044439 (2001-02-01), None
Japanese Office Action dated Aug. 4, 2004.

Affiliated with

Also associated with

Rating

Method for manufacturing thin film semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing thin film semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing thin film semiconductor device and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3440827