Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Patent
1995-05-05
1997-01-14
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
117 7, 117 8, 117945, C30B 110
Patent
active
055934951
ABSTRACT:
In a method for manufacturing a thin film of metal-oxide dielectric, a precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solution is made a thin film by spin coating. In a third step, this thin film in the sol state is dried to convert it into a thin film of dry gel. Thereafter, in a fourth step, the thin film of dry gel is subjected to a heat treatment for thermally decomposing and removing organic substances in the dry gel thin film and simultaneously crystallizing this gel state thin film.
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Arai Hisako
Kita Ryusuke
Koba Masayoshi
Masuda Yoshiyuki
Ohtani Noboru
Kunemund Robert
Sharp Kabushiki Kaisha
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