Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-02-20
2007-02-20
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
Reexamination Certificate
active
10638385
ABSTRACT:
In a method for manufacturing a thin-film multilayer electronic component, dielectric thin films and thin-film internal electrodes are alternately layered on each other to form a laminate. The thin-film internal electrodes are alternately displaced in a predetermined direction to form an overlap portion. The entire thickness of the laminate and a portion of the thickness of the substrate are cut to form grooves in portions other than the overlap portion, in a direction that is substantially perpendicular to the predetermined direction. External electrodes are formed on at least the cut surfaces of the laminate and the half-cut surfaces of the substrate. Then, the substrate is fully cut in the thickness direction along the grooves such as not to substantially remove the external electrodes.
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Official Communication dated Feb. 21, 2006, issued in the corresponding Japanese Patent Application No. 2002-251284. (With full English translation).
Keating & Bennett LLP
Murata Manufacturing Co. Ltd.
Nguyen Cuong
LandOfFree
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