Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1978-04-20
1979-09-25
Lazarus, Richard B.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
29 2518, H01J 904
Patent
active
041685652
ABSTRACT:
A method for manufacturing a thermionic cathode is provided which comprises cutting a bar from a multi-layer structure having a first layer of thermoelectron emissive compound and a third layer of metal of high melting point, a second layer of reaction barrier being interposed between said first and third layers, the bar being cut in a direction substantially perpendicular to that of the layers, sharpening the end of the first layer of the bar and then providing current terminals with the third layer of the bar. According to the method of the invention, a thermionic cathode capable of emitting stable electron beams of high intensity for a long period of time can be manufactured.
REFERENCES:
patent: 3745403 (1973-07-01), Misumi
patent: 3823337 (1974-07-01), VAN Stratum et al.
patent: 4055780 (1977-10-01), Kawai et al.
Hiraoka Hideo
Ishii Masaji
Miyai Akira
Watanabe Shuzo
Denki Kagaku Kogyo Kabushiki Kaisha
Lazarus Richard B.
Sutton Paul J.
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