Method for manufacturing thermal-type infrared sensor

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Thermally responsive

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438104, 338 15, 338 18, H01L 3108

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active

059665904

ABSTRACT:
In a method of manufacturing a thermal-type infrared sensor including a thermosensitive part, a bolometer material is formed as the thermosensitive part and is subjected to post-processing to control a temperature coefficient of resistance in the bolometer material. The bolometer material may be formed by titanium or vanadium.

REFERENCES:
patent: 4574263 (1986-03-01), Liddiard
patent: 5450053 (1995-09-01), Wood
G.V. Jorgenson et al., "Doped Vanadium Oxide for Optical Switching Films", Solar Energy Materials, vol. 14, 1986, pp. 205-214.
Jin-Shown Shie et al., "Design considerations of metal-film bolometer with micromachined floating membrane", Sensors and Actuators A, vol. 33, 1992, pp. 183-189.

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