Method for manufacturing surface acoustic wave device

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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C029S025350, C029S592100, C029S609100, C204S192320, C204S192330, C204S192350, C216S062000, C216S066000, C310S31300R, C310S31300R, C310S31300R, C310S364000, C333S193000, C333S195000

Reexamination Certificate

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10792543

ABSTRACT:
A piezoelectric substrate is provided with interdigital transducer electrodes including a first electrode layer, a second electrode layer, and a third electrode layer that is principally made of aluminum. The piezoelectric substrate has a stepped structure on the surface of the piezoelectric substrate, the stepped structure including terraces each having a width of about 50 nm or less and steps each having a width of a mono-molecular layer (e.g., about 14 Å).

REFERENCES:
patent: 6630767 (2003-10-01), Inoue et al.
patent: 6657366 (2003-12-01), Watanabe et al.
patent: 6822371 (2004-11-01), Nakagawara et al.
patent: 2002/0008437 (2002-01-01), Inoue et al.
patent: 2002/0074904 (2002-06-01), Watanabe et al.
patent: 1 158 669 (2001-11-01), None
patent: 54060883 (1979-05-01), None
patent: 08-195635 (1996-07-01), None
patent: 2002-368568 (2002-12-01), None
patent: 2003-069357 (2003-03-01), None
patent: 2003-69357 (2003-03-01), None
Passive and remote sensing based upon surface acoustic wave in special enviroments Dai Enguang; Feng Guanping; Microwave and Optoelectronics Conference, 1997; Aug. 11-14, 1997; pp. 133-139 vol. 1.
Osamu Nakagawara et al.; “Epitaxially Grown Aluminum Films With Titanium Intermediate Layer on ∅Rotated Y-X LiNbO3Piezoelectric Single Crystal Substrates”; Journal of Crystal Growth; No. 249; Mar. 2003; pp. 497-501.

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