Method for manufacturing superconducting device having a reduced

Details Method for manufacturing superconducting device having a reduced Method for manufacturing superconducting device having a reduced

1994-07-25

1995-07-18

King, Roy V.

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Semiconductor device or thin film electric solid-state...

505410, 505473, 505475, 505193, 505191, 505728, 427 62, 427 63, 257 66, H01L 3924

Patent

active

054341272

ABSTRACT:
For manufacturing a superconducting device, a first c-axis orientated oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. An a-axis orientated oxide superconductor thin film is grown, using the gate electrode as a mask, so that second and third superconducting regions having a relatively thick thickness are formed at both sides of the gate electrode, electrically isolated from the gate electrode. The superconducting device thus formed can functions as a super-FET.

REFERENCES:
patent: 5126315 (1992-06-01), Nishino et al.
patent: 5236896 (1993-08-01), Nakamura et al.
patent: 5274249 (1993-12-01), Xi et al.
Wu et al., "High Critical Currents in Epitaxial Y-Ba-Cu-O Thin Films On Silicon With Buffer Layers," Appl. Phys. Lett., vol. 54, #8, 20 Feb. 1989, pp. 754-756.
Mizuno et al., "Fabrication Of Thin-Film-Type Josephson Junctions Using A Bi-Sr-Ca-Cu-O/Bi-Sr-Cu-O/Bi-Sr-Ca-Cu-O Structure," Appl. Phys. lett., vol. 56, #15, 9 Apr. 1990, ppo. 1469-1471.

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