Method for manufacturing superconducting device having a reduced

Details Method for manufacturing superconducting device having a reduced Method for manufacturing superconducting device having a reduced

1995-06-07

1996-08-20

King, Roy V.

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Semiconductor device or thin film electric solid-state...

505410, 505473, 505193, 505234, 505238, 505728, 427 62, 427 63, H01L 3924

Patent

active

055479235

ABSTRACT:
For manufacturing a superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film, using the gate electrode as a mask, so that first and second superconducting regions having a relatively thick thickness are formed at opposite sides of the gate electrode, electrically isolated from the gate electrode. A source electrode and a drain electrode is formed on the first and second oxide superconducting regions. The superconducting device thus formed can functions as a super-FET.

REFERENCES:
patent: 5236896 (1993-08-01), Nakamura et al.
patent: 5322526 (1994-06-01), Nakamura et al.
patent: 5399546 (1995-03-01), Nakamura et al.
D. F. Moore et al, "Superconducting Thin Films for Devie Applications", Workshop on High Temperature Superconducting Electron Devices, pp. 281-284 (Jun. 7, 1989).
Wu et al, Appl. Phys. Lett. 54(8) Feb. 1989, pp. 754-756.

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