Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Reexamination Certificate
2008-07-08
2008-07-08
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
C438S029000, C438S034000, C438S046000, C438S047000, C438S962000, C438S979000
Reexamination Certificate
active
07396696
ABSTRACT:
An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.
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Chung Kwan-Soo
Kang Tae-Won
Kim Hwa-Mok
Au Bac H
Dongguk University Industry Academic Cooperation Foundation
Fredrikson & Byron PA
Smith Zandra
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