Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Warping of semiconductor substrate
Reexamination Certificate
2011-05-03
2011-05-03
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Warping of semiconductor substrate
C257SE21122, C136S261000
Reexamination Certificate
active
07935611
ABSTRACT:
A silicon layer having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate and hydrogen ions are implanted to a predetermined depth into the surface region of the silicon substrate through the silicon layer to form a hydrogen ion-implanted layer. Then, an n-type germanium-based crystal layer whose conductivity type is opposite to that of the silicon layer and a p-type germanium-based crystal layer whose conductivity type is opposite to that of the germanium-based crystal layer are successively vapor-phase grown to provide a germanium-based crystal. The surface of the germanium-based crystal layer and the surface of the supporting substrate are bonded together. In this state, impact is applied externally to separate a silicon crystal from the silicon substrate along the hydrogen ion-implanted layer, thereby transferring a laminated structure composed of the germanium-based crystal and the silicon crystal onto the supporting substrate.
REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 5882987 (1999-03-01), Srikrishnan
patent: 6100166 (2000-08-01), Sakaguchi et al.
patent: 6534382 (2003-03-01), Sakaguchi et al.
patent: 2003/0203547 (2003-10-01), Sakaguchi et al.
patent: 62 291183 (1987-12-01), None
patent: 5 211128 (1993-08-01), None
patent: 6 291341 (1994-10-01), None
patent: 9 255487 (1997-09-01), None
patent: 10 233352 (1998-09-01), None
patent: 10 335683 (1998-12-01), None
patent: 11 121377 (1999-04-01), None
patent: 2001 53299 (2001-02-01), None
patent: 2005 096397 (2005-10-01), None
King, R. R. et al., “Metamorphic GaInP/GaInAs/Ge Solar Cells”, Proc. 28thIEEE Photovoltaic Specialists Conf., pp. 982-985, (2000).
Hammond, Martin L. “Silicon Epitaxy”, Solid State Technology, vol. 2, pp. 68-75, (1978).
Akiyama Shoji
Ito Atsuo
Kawai Makoto
Kubota Yoshihiro
Tanaka Koichi
Coleman W. David
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Shin-Etsu Chemical Co. , Ltd.
LandOfFree
Method for manufacturing substrate for photoelectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing substrate for photoelectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing substrate for photoelectric... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2682670