Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-01-01
2008-01-01
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S745000
Reexamination Certificate
active
07314833
ABSTRACT:
According to one embodiment, a method for manufacturing a substrate for a discrete track recording media, the method includes forming an imprint resist layer on a substrate, imprinting, on the imprint resist layer, a stamper formed with patterns of protrusions and recesses corresponding to recording track zones and servo zones to transfer the patterns of protrusions and recesses to the imprint resist layer, removing the stamper from the imprint resist layer, and diffusing liquefied CO2in a process chamber set at a pressure of 2 to 5 atm, diffusing liquefied H2O in the process chamber set at a pressure of 0.01 to 1 atm, or diffusing a reactive gas selected from a group consisting of liquefied CF4, CHF3, SF6, and C2F6in the process chamber set at an arbitrary pressure, to jet spray the liquefied gas onto a surface of the substrate.
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Kamata Yoshiyuki
Kikitsu Akira
Naito Katsuyuki
Oka Masahiro
Sakurai Masatoshi
Chen Kin-Chan
Kabushiki Kaisha Toshiba
Pillsbury Winthrop Shaw & Pittman LLP
Showa Denko K.K.
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