Method for manufacturing static induction type semiconductor dev

Fishing – trapping – and vermin destroying

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437149, 437911, H01L 21266

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active

051770296

ABSTRACT:
A method for manufacturing a static induction type semiconductor device is to form gate zones on a surface side of a semiconductor substrate, to cover the surface including the gate zones with an oxide film, to form through the oxide film apertures for providing cathode zones in the substrate, the apertures respectively overlapping partly each gate zone, and to form the cathode zones with thermal diffusion of an impurity carried out through the apertures, the cathode zones thus partly overlapping the gate zones. Concentration of the impurity as well as the depth of the diffusion at thus made impurity diffusion zones can be thereby stabilized, and eventually electric characteristics of enhancement type, static induction type semiconductor device can be sufficiently made stable.

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patent: 4889826 (1989-12-01), Ohta
Wolf et al., "Silicon Processing for the VLSI Era, vol. 1", pp. 213-215, 264, 280-282, 303-307, 520; 1986.

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