Method for manufacturing stable metal thin film resistors compri

Details Method for manufacturing stable metal thin film resistors compri Method for manufacturing stable metal thin film resistors compri

1975-10-01

1977-12-13

Lovell, C.

Electrical resistors

With base extending along resistance element

Resistance element coated on base

75174, 204192F, 428457, H01C 1012, C23C 1500

Patent

active

040632113

ABSTRACT:
A method for manufacturing a highly stable metal thin film resistor including a substrate having deposited thereon a sputtered tantalum-silicon alloy film containing from 50-72 atomic percent of silicon, comprising heating the as-sputtered amorphous film to a temperature of between 500.degree. C and 750.degree. C for a time period of from 1 to 60 minutes in an ambient atmosphere of air or oxidizing gas or in an ambient atmosphere of inert gas or a vacuum. The as-sputtered film becomes completely crystallized, and a tantulum-silicon alloy thin film resistor which is high in stability, high in specific resistance and has a low temperature coefficient of resistance is obtained.

REFERENCES:
patent: 3738919 (1973-06-01), Chilton et al.
patent: 3790913 (1974-02-01), Peters
Journal of Electrochemical Society, vol. 121, Apr. 1974, pp. 550-555.

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