Method for manufacturing solid-state imaging device having...

Details Method for manufacturing solid-state imaging device having... Method for manufacturing solid-state imaging device having...

2011-05-17

2011-10-25

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S065000, C438S070000

Reexamination Certificate

active

08043883

ABSTRACT:
Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

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patent: 2008/0074527 (2008-03-01), Kato
patent: 2008/0143829 (2008-06-01), Takeda
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patent: 2008/0170143 (2008-07-01), Yoshida
patent: 4-34977 (1992-02-01), None
patent: 2910161 (1999-04-01), None
patent: 2003-234456 (2003-08-01), None

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