Method for manufacturing solid-state imaging device, and...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S309000, C257SE27123, C257SE31001

Reexamination Certificate

active

07470558

ABSTRACT:
A method for manufacturing a solid-state imaging device, comprising: a step of forming an imaging portion comprising a photoelectric conversion portion and a charge transfer portion that transfers charges generated in the photoelectric conversion portion; and a step of forming a condensing lens over the imaging portion, wherein the step of forming the condensing lens comprises: a step of forming a lens substrate for forming a lens; a step of forming a first optical film having a lens shape by patterning the lens substrate; and a step of forming a second optical film on the first optical film by controlling a filming condition so as to form the lens having a desired curvature.

REFERENCES:
patent: 5215928 (1993-06-01), Hirai
patent: 6122009 (2000-09-01), Ueda
patent: 9-45884 (1997-02-01), None

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