Method for manufacturing solid-state imaging device

Details Method for manufacturing solid-state imaging device Method for manufacturing solid-state imaging device

2011-06-28

2011-06-28

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE27130, C257SE31052, C257SE27148, C257SE31078, C257SE31075, C438S057000, C438S075000

Reexamination Certificate

active

07968365

ABSTRACT:
A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a negative-charge accumulated layer having negative fixed charges is formed above a detection plane of the charge generator, the method includes the steps of: forming an oxygen-feed film capable of feeding oxygen on the detection plane of the charge generator; forming a metal film that covers the oxygen-feed film on the detection plane of the charge generator; and performing heat treatment for the metal film in an inactive atmosphere to thereby form an oxide of the metal film between the metal film and the oxygen-feed film on the detection plane of the charge generator, the oxide being to serve as the negative-charge accumulated layer.

REFERENCES:
patent: 2007/0034981 (2007-02-01), Saito
patent: 2003-031785 (2003-01-01), None

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