Method for manufacturing solid-state image pick-up device

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S458000, C438S057000, C257SE21570

Reexamination Certificate

active

07897427

ABSTRACT:
There is provided a method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer; forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer; forming a support substrate on the wiring layer; peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and planarizing the surface of the silicon layer.

REFERENCES:
patent: 6277715 (2001-08-01), Takeno et al.
patent: 7582502 (2009-09-01), Hwang et al.
patent: 1612863 (2006-01-01), None
patent: 2007-013089 (2007-01-01), None
patent: 03/019667 (2003-03-01), None
patent: 2008/033508 (2008-03-01), None
European Search Report for European patent application No. 10000005.8, dated May 10, 2010.

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