Method for manufacturing solid electrolytic capacitor device

Details Method for manufacturing solid electrolytic capacitor device Method for manufacturing solid electrolytic capacitor device

2006-06-30

2010-11-30

Geyer, Scott B (Department: 2812)

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

Reexamination Certificate

active

07842103

ABSTRACT:
The present invention relates to a production method of a solid electrolytic capacitor element wherein a semiconductor layer is formed by electrolytic polymerization on an oxide dielectric film formed on the surface of an electric conductor and an electrode layer is laminated thereon, comprising passing current providing a period for temporarily applying a reverse voltage during the electrolytic polymerization passing current using an electric conductor having a dielectric layer formed thereon as an anode and a negative electrode plate placed in the electrolyte as a cathode; a solid electrolytic capacitor element produced by the method; a solid electrolytic capacitor obtained from the solid electrolytic capacitor element and use thereof. According to the present invention, a solid electrolytic capacitor element in which a high quality semiconductor layer is formed in a short time can be produced, which enables to produce a solid electrolytic capacitor having a good ESR property.

REFERENCES:
patent: 5183543 (1993-02-01), Toyosawa et al.
patent: 6430026 (2002-08-01), Nagato et al.
patent: 02-299213 (1990-12-01), None
patent: 03-139816 (1991-06-01), None
patent: 2001-332450 (2001-11-01), None
patent: 2001-332453 (2001-11-01), None
patent: 2003-068572 (2003-03-01), None
Machine translation of JP 2003-068572.
Machine translation of JP 2001-332453.

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