Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2008-03-17
2011-11-15
Bryant, Kiesha (Department: 2891)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C438S239000
Reexamination Certificate
active
08057553
ABSTRACT:
A method for manufacturing a solid electrolytic capacitor having a solid electrolyte layer containing an electrically conductive polymer layer formed by electrolytic oxidative polymerization, comprising: forming a dielectric layer on a surface of an anode element containing a valve metal; forming an electrically conductive precoat layer on the dielectric layer; and performing electrolytic oxidative polymerization in an electrolytic polymerization solution containing a monomer, a dopant agent and a chelating agent to form the electrically conductive polymer layer on the electrically conductive precoat layer.
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Chinese Office Action dated Nov. 10, 2010, issued in corresponding Chinese Patent Application No. 200810086518.6.
Iwasa Tetsuro
Nakajima Hiroshi
Omura Seiji
Bryant Kiesha
Naraghi Ali
SANYO Electric Co., Ltd.
Westerman Hattori Daniels & Adrian LLP
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