Method for manufacturing solid electrolytic capacitor

Details Method for manufacturing solid electrolytic capacitor Method for manufacturing solid electrolytic capacitor

2005-02-08

2005-02-08

Nguyen, Ha Tran (Department: 2812)

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

C361S520000, C361S540000

Reexamination Certificate

active

06852137

ABSTRACT:
A method for manufacturing solid electrolytic capacitor that can be mounted direct on a semiconductor component and offers a superior high frequency characteristic. An aluminum foil20is provided on one surface with a resist film23and then with a through hole24. Next, an insulation film25is formed to cover the other surface of aluminum foil20and to fill the first through hole, and then the resist film23is removed; and then the surface of aluminum foil20is roughened to be provided with a dielectric layer27thereon. A second through hole36is formed in the insulation film25, which is filling the first through hole24. A through hole electrode28is formed in the second through hole; and then, on the surface of the dielectric layer27, a solid electrolytic layer29and a collector layer30are formed. After an opening37is provided, a first connection terminal31is formed therein, and a second connection electrode32on the exposed surface of the through hole electrode28.

REFERENCES:
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patent: 6510045 (2003-01-01), Mido et al.
patent: 409213587 (1997-08-01), None
patent: 11-274002 (1999-10-01), None
patent: 2000-49054 (2000-02-01), None

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