Method for manufacturing solar cell

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S097000, C438S476000, C438S486000, C438S496000, C257SE31048

Reexamination Certificate

active

07863075

ABSTRACT:
A manufacturing method of a polycrystalline solar cell is disclosed. A polycrystalline silicon solar cell in accordance with the present invention performs crystallization-annealing amorphous silicon with a metal catalyst so as to reduce a crystallization temperature. The manufacturing method of a solar cell in accordance with the present invention includes the steps of (a) forming a first amorphous silicon layer on a substrate; (b) forming a second amorphous silicon layer on the first amorphous silicon layer; (c) forming a metal layer on the second amorphous silicon layer; (d) performing crystallization-annealing the second amorphous silicon layer; and (e) forming a third amorphous silicon layer on a resulting crystalline silicon layer of the step (d).

REFERENCES:
patent: 5147826 (1992-09-01), Liu et al.
patent: 5797999 (1998-08-01), Sannomiya et al.
patent: 9181344 (1997-07-01), None
patent: 2002-0027775 (2002-04-01), None
patent: 2003-0017202 (2003-03-01), None
patent: 10-0392924 (2004-01-01), None

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