Method for manufacturing SOI wafer

Details Method for manufacturing SOI wafer Method for manufacturing SOI wafer

2007-10-02

2007-10-02

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C257SE21122

Reexamination Certificate

active

10537092

ABSTRACT:
The present invention provides a manufacturing method for an SOI wafer with a high productivity in which generation of a void is suppressed in manufacturing the SOI wafer. In a manufacturing method for an SOI wafer of the present invention in which two starting wafers are prepared, an insulating layer is formed on at least one of the two starting wafers and the one wafer is adhered to the other wafer without using an adhesive agent, the starting wafers each with no line defect on a surface thereof are used. In a manufacturing method for an SOI wafer of the present invention in which two starting wafers are prepared, an insulating layer is formed on at least one of the two starting wafers and the one wafer is adhered to the other wafer without using an adhesive agent, the starting wafers are subjected to a high temperature heat treatment in advance.

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PCT International Search Report for PCT/JP03/15326 mailed on Mar. 2, 2004.

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