Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2010-01-08
2011-11-08
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S455000, C438S459000, C257SE21545, C257SE21561
Reexamination Certificate
active
08053332
ABSTRACT:
To provide a method for manufacturing a semiconductor substrate provided with a single crystal semiconductor layer which can be used practically even when a substrate with a low upper temperature limit, such as a glass substrate, is used. An oxide film is formed on a single crystal semiconductor substrate; accelerated ions are introduced into the single crystal semiconductor substrate through the oxide film to form an embrittled region in the single crystal semiconductor substrate; a supporting substrate is bonded such that the supporting substrate and the single crystal semiconductor substrate face each other with the oxide film interposed therebetween; separation is performed at the embrittled region into the supporting substrate to which a single crystal semiconductor layer is bonded and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; first etching is performed on a surface of the single crystal semiconductor layer bonded to the supporting substrate with a substrate bias applied; the single crystal semiconductor layer is irradiated with a laser beam and at least part of the surface of the single crystal semiconductor layer is melted and solidified; and second etching is performed on the surface of the single crystal semiconductor layer with no substrate bias applied.
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Chang Leonard
Lindsay, Jr. Walter L
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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