Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-07-12
2011-07-12
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S530000, C257SE21568, C257SE21320
Reexamination Certificate
active
07977209
ABSTRACT:
A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.
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Akiyama Shoji
Ito Atsuo
Kawai Makoto
Kubota Yoshihiro
Tanaka Koichi
Jefferson Quovaunda
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Shin-Etsu Chemical Co. , Ltd.
Smith Matthew
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