Method for manufacturing SOI substrate

Details Method for manufacturing SOI substrate Method for manufacturing SOI substrate

2010-03-23

2011-11-01

Sarkar, Asok (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21568, C438S166000, C438S311000, C438S406000, C438S455000

Reexamination Certificate

active

08048773

ABSTRACT:
A single crystal semiconductor separated from a single crystal semiconductor substrate is formed partly over a supporting substrate with a buffer layer provided therebetween. The single crystal semiconductor is separated from the single crystal semiconductor substrate by irradiation with accelerated ions, formation of a fragile layer by the ion irradiation, and heat treatment. A non-single crystal semiconductor layer is formed over the single crystal semiconductor and irradiated with a laser beam to be crystallized, whereby an SOI substrate is manufactured.

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